C 5060 transistor datasheet book

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Posted on february 22, 2016 september 18, 2019 by pinout. D absolute maximum rating ta25 c, unless otherwise specified parameter symbol ratings unit collectorbase voltage vcbo 120 v collectoremitter voltage vceo 120 v emitterbase voltage vebo 5 v collector current ic 800 ma. This book presents technical data for motorolas broad line of silicon power transistors. Bc107 bc108 bc109 low power bipolar transistors page 2 300505 v1. Page 2 of 3 electrical characteristics t ambient25. Bc107bc108 series low power bipolar transistors page 2 200406 v1. The datasheetarchive datasheet search engine author. Sparkfuns department of education uses electronics as a creative medium and handson learning tool, with products and curriculum designed to develop foundational skills for students to explore the world of electronics, increase investment, and ownership in education, and plant the seeds of inventorship in todays youth. Toshiba transistor silicon pnp epitaxial type pct process. Ic collector current 600 ma pc collector power dissipation 625 mw tj junction temperature 150 c tstg storage temperature 55 150 c symbol parameter test condition min. C4834 datasheet, c4834 pdf, c4834 data sheet, datasheet, data sheet, pdf. Free packages are available maximum ratings rating symbol value unit collector. If your question requires design or troubleshooting information, please email email protected for a prompt reply.

B2, december 2002 bc635637639 npn epitaxial silicon transistor absolute maximum ratings ta25 c unless otherwise noted pw5ms, duty cycle10%. Bc107 bc108 bc109 low power bipolar transistors page 1 300505 v1. Mouser is an authorized distributor for many transistor manufacturers including diodes inc. Smallsignal transistor data book, 86 pages, 1984, motorola. Document 6002 rev 03 page 2 of 12 that1570 lownoise differential audio preamplifier ic. Product specification silicon npn power transistor 2sc2166 description high power gain. Bc635637639 npn epitaxial silicon transistor absolute maximum ratings ta25 c unless otherwise noted pw5ms, duty cycle10% electrical characteristics ta25 c unless otherwise noted symbol parameter value units. To92 to226, pins3 2n5060 series sensitive gate silicon controlled rectifiers. Miniature square inductive proximity sensor e2s miniature housing with long sensing ranges front ans side facing sensing surfaces features the 5. Silicon npn transistor epitaxial planar typepct process korea electronics kec 4.

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Full text of ecg semiconductors master replacement guide 1989. If the jedec number is obsolete, refer to that number in the index to locate its technical data. Copies of the, y9 y8 device types 02 and 06 case outline 3 di d0 a e nc vcc y0 yl 4 3 2 1 28 27 26 o2 4 a, c 2 23 3 y6 y3 c 2 23 3 y6 y2 c 3 22 3 a. C101 datasheet, equivalent, cross reference search. Bc618 darlington transistors npn silicon features these are pb. Order this document motorola by 2n5655d semiconductor technical data 2n5655 2n5656 plastic npn silicon 2n5657 highvoltage power transistor. Therefore, it is important to refer to the datasheet for the exact part number and. Bc107bc108 series low power bipolar transistors page 3 200406 v1. C5060 datasheet, c5060 pdf, c5060 data sheet, c5060 manual, c5060 pdf, c5060, datenblatt, electronics c5060, alldatasheet, free, datasheet, datasheets, data sheet. Mar 04, 2018 c1815 transistor datasheet vcbo60v, npn toshiba. Toshiba transistor silicon pnp epitaxial type pct process 2sc1959 audio frequency low power amplifier applications driver stage amplifier applications switching applications excellent hfe linearity.